Atomistic simulations of acceptor removal in p-type Si irradiated with neutrons

The effective dopant concentration in p-type Si detectors reduces with irradiation fluence at low fluences due to the acceptor removal process, which degrades detector performance and shortens its lifetime. This effect has been experimentally characterized parametrized, but microscopic origin is still unknown. We use atomistic simulations gain insight into neutron by modeling damage generation defect-dopant interactions. analyze on deactivation of di- tri-interstitial diffusion, inhomogeneity wafer temperature rise during irradiation. characterize defect rates identify relevant Acceptor occurs mainly through formation B i pairs small boron-interstitial clusters, it limited availability mobile interstitials. presence impurities (O, C) modifies B-complexes favoring O, a amount removed acceptors.